mbr3020 thru MBR30100 30 a mp rectifier 2 0 to 100 v o lts features ? o pe r ating t e m pe r atu r e: - 5 5 c to +15 0 c ? sto r age t e m pe r atu r e: - 5 5 c to +15 0 c mcc part number maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage mb r 3020 2 0v 14 v 20 v mb r 3030 3 0v 21 v 30 v mb r 3035 35 v 24.5 v 35 v mb r 3040 40v 28v 40v mb r 3045 45 v 31.5 v 45 v mb r 3060 6 0v 42 v 60 v mbr3080 8 0v 56 v 80 v e lect r ical cha r acte r istics @ 2 5 c u nless o t he r w ise s p ecified average forward current i f(av) 30 a t l = 1 0 5 c peak f o r w a r d su r ge cu rr ent i fsm 4 0 0 a 8.3 m s , half s i ne ma x i m um in s tantaneous forward voltage v f i fm = 30 .0a; t a = 25 c maximum dc reverse current at rated dc blocking voltage i r 1 .0 m a t a = 25 c typical junction capacitance c j 2 0 0pf mea s u r ed at 1.0mhz, v r =4.0v schottky barrier max i mum rat i n gs metal of siliconrectifier, majonty carrier conducton guard ring for transient protection low power loss high efficiency high surge capacity, high current capability *pul s e t e s t: pul s e w i dth 30 0 s e c, d u t y c y c l e 1 % mbr3020-3045 mbr3060 mbr3080-30100 .63 v .84 v .75 v mb r 30100 100v 70v 100v a n e d c k h v u l g b q 1 2 pin 1: anode pin 2: anode case: cathode d i m e n s i o ns inches mm dim min max min max a 1.550 ref 39.37 ref b ----- 1.050 ----- 26.67 c .250 .335 6.35 8.51 d .038 .043 0.97 1.09 e .055 .070 1.40 1.77 g .430 bsc 10.92 bsc h .215 bsc 5.46 bsc k .440 .480 11.18 12.19 l .665 bsc 16.89 bsc n ----- .830 ----- 21.08 q . 151 . 165 3 . 84 4 . 19 u 1.187 bsc 30.15 bsc v .131 1.88 3.33 4.77 to-3 product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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